Datasheet STGW35NB60SD - STMicroelectronics IGBT, TO-247 — 数据表

详细说明

Manufacturer: STMicroelectronics

Description: IGBT, TO-247

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Docket:
STGW35NB60SD
N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESHTM IGBT
General features
Type STGW35NB60SD
VCES 600V

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 70 A
• Collector Emitter Voltage Vces: 1.7 V
• Power Dissipation Max: 200 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-247
• Current Ic Continuous a Max: 70 A
• Package / Case: TO-247
• Power Dissipation: 200 W
• Power Dissipation Pd: 200 W
• Pulsed Current Icm: 250 A
• Rise Time: 70 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5
• Fischer Elektronik - WLPG 02