Datasheet IXGR60N60B2 - IXYS IGBT, ISOPLUS247 — 数据表
Part Number: IXGR60N60B2
详细说明
Manufacturer: IXYS
Description: IGBT, ISOPLUS247
Docket:
Advance Technical Data
HiPerFASTTM IGBT ISOPLUS247TM
B2-Class High Speed IGBTs
IXGR 60N60B2 IXGR 60N60B2D1
(Electrically Isolated Back Surface)
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 75 A
- Collector Emitter Voltage Vces: 2 V
- Power Dissipation Max: 250 W
- Collector Emitter Voltage V(br)ceo: 600 V
- Operating Temperature Range: -55°C to +150°C
- Transistor Case Style: ISOPLUS-247
- Current Ic Continuous a Max: 75 A
- Fall Time tf: 100 ns
- Junction to Case Thermal Resistance A: 0.5°C/W
- Package / Case: ISOPLUS-247
- Pin Configuration: Single
- Power Dissipation: 250 W
- Rise Time: 100 ns
- Termination Type: Through Hole
- Transistor Polarity: NPN
- Voltage Vces: 600 V
RoHS: Yes