Datasheet IXGR60N60B2D1 - IXYS IGBT, ISOPLUS247 — 数据表

详细说明

Manufacturer: IXYS

Description: IGBT, ISOPLUS247

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Docket:
Advance Technical Data
HiPerFASTTM IGBT ISOPLUS247TM
B2-Class High Speed IGBTs
IXGR 60N60B2 IXGR 60N60B2D1
(Electrically Isolated Back Surface)

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 75 A
• Collector Emitter Voltage Vces: 2 V
• Power Dissipation Max: 250 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: ISOPLUS-247
• Current Ic Continuous a Max: 75 A
• Fall Time tf: 100 ns
• Junction to Case Thermal Resistance A: 0.5°C/W
• Package / Case: ISOPLUS-247
• Pin Configuration: Copack (FRD)
• Power Dissipation: 250 W
• Rise Time: 100 ns
• Termination Type: Through Hole
• Transistor Polarity: NPN
• Voltage Vces: 600 V

RoHS: Yes