Datasheet IXSR35N120BD1 - IXYS IGBT, ISOPLUS247 — 数据表

详细说明

Manufacturer: IXYS

Description: IGBT, ISOPLUS247

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Docket:
IGBT with Diode ISOPLUS 247TM
Short Circuit SOA Capability
IXSR 35N120BD1
(Electrically Isolated Backside)
VCES IC25 VCE(sat) tfi(typ)

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 70 A
• Collector Emitter Voltage Vces: 3.6 V
• Power Dissipation Max: 250 W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: ISOPLUS-247
• Current Ic Continuous a Max: 70 A
• Fall Time tf: 180 ns
• Junction to Case Thermal Resistance A: 0.5°C/W
• Package / Case: ISOPLUS-247
• Pin Configuration: Copack (FRD)
• Power Dissipation: 250 W
• Rise Time: 180 ns
• Termination Type: Through Hole
• Transistor Polarity: NPN
• Voltage Vces: 1200 V

RoHS: Yes