Datasheet Infineon IGB110S101 — 数据表
| 制造商 | Infineon |
| 系列 | IGB110S101 |
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs.
数据表
Datasheet IGB110S101
PDF, 1.2 Mb, 语言: en, 修订版: 01_00, 文件上传: Apr 23, 2025, 页数: 18
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs
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价格
详细说明
Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
状态
| IGB110S101XTMA1 | |
|---|---|
| Lifecycle Status | Active (Recommended for new designs) |
模型线
系列: IGB110S101 (1)
制造商分类
- Power > Gallium nitride (GaN) > GaN transistors