Datasheet IXDR30N120 - IXYS IGBT, ISOPLUS247 — 数据表

详细说明

Manufacturer: IXYS

Description: IGBT, ISOPLUS247

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Docket:
IXDR 30N120 D1 IXDR 30N120
High Voltage IGBT with optional Diode ISOPLUSTM package
(Electrically Isolated Back Side)
Short Circuit SOA Capability Square RBSOA
C G G C

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 50 A
• Collector Emitter Voltage Vces: 2.4 V
• Power Dissipation Max: 200 W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: ISOPLUS-247
• Current Ic Continuous a Max: 50 A
• Fall Time tf: 70 ns
• Junction to Case Thermal Resistance A: 0.6°C/W
• Package / Case: ISOPLUS-247
• Pin Configuration: Single
• Power Dissipation: 200 W
• Power Dissipation Pd: 200 W
• Rise Time: 70 ns
• Termination Type: Through Hole
• Transistor Polarity: NPN
• Voltage Vces: 1200 V

RoHS: Yes