Datasheet IRGB6B60KPBF - International Rectifier IGBT, 600 V, 13 A, TO-220 — 数据表

详细说明

Manufacturer: International Rectifier

Description: IGBT, 600 V, 13 A, TO-220

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Docket:
PD - 94575A
INSULATED GATE BIPOLAR TRANSISTOR
Features
· Low VCE (on) Non Punch Through IGBT Technology.

· 10µs Short Circuit Capability. · Square RBSOA. · Positive VCE (on) Temperature Coefficient.
C

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 13 A
• Collector Emitter Voltage Vces: 1.8 V
• Power Dissipation Max: 90 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-220AB
• Number of Pins: 3
• Current Ic Continuous a Max: 13 A
• Fall Time Max: 18 ns
• Fall Time tf: 18 ns
• Package / Case: TO-220AB
• Power Dissipation: 90 W
• Power Dissipation Pd: 90 W
• Power Dissipation Ptot Max: 90 W
• Pulsed Current Icm: 26 A
• Rise Time: 17 ns
• SMD Marking: IRGB6B60K
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5