Datasheet IRGIB7B60KDPBF - International Rectifier IGBT, 600 V, 12 A, TO-220FP — 数据表

详细说明

Manufacturer: International Rectifier

Description: IGBT, 600 V, 12 A, TO-220FP

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Docket:
PD - 95195
IRGIB7B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· · · · · · Low VCE (on) Non Punch Through IGBT Technology.

10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 12 A
• Collector Emitter Voltage Vces: 2.2 V
• Power Dissipation Max: 39 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Transistor Case Style: TO-220FP
• Number of Pins: 3
• Current Ic Continuous a Max: 12 A
• Fall Time Max: 42 ns
• Fall Time tf: 42 ns
• Package / Case: TO-220FP
• Power Dissipation: 39 W
• Power Dissipation Pd: 39 W
• Pulsed Current Icm: 24 A
• Rise Time: 22 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5