Datasheet HGTG30N60B3 - Fairchild TRANSISTOR, IGBT — 数据表

Fairchild HGTG30N60B3

Part Number: HGTG30N60B3

详细说明

Manufacturer: Fairchild

Description: TRANSISTOR, IGBT

Docket:
HGTG30N60B3
Data Sheet November 2004
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49170.
Features

Specifications:

Transistor Type: IGBT
DC Collector Current: 60 A
Collector Emitter Voltage Vces: 1.45 V
Power Dissipation Max: 208 W
Collector Emitter Voltage V(br)ceo: 600 V
Operating Temperature Range: -55°C to +150°C
Transistor Case Style: TO-247
Number of Pins: 3
Current Ic Continuous a Max: 60 A
Package / Case: TO-247
Power Dissipation: 208 W
Termination Type: Through Hole
Transistor Polarity: NPN
Voltage Vces: 1.45 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5