Datasheet GT30J324 - Toshiba IGBT, 600 V, TO-3P(N) — 数据表

详细说明

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-3P(N)

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Docket:
GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
· · · The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) · · Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Unit: mm

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 30 A
• Collector Emitter Voltage Vces: 2.45 V
• Power Dissipation Max: 170 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-3P (N)
• Current Ic Continuous a Max: 30 A
• Fall Time Typ: 50 ns
• Junction Temperature Tj Max: 150°C
• Junction to Case Thermal Resistance A: 0.735°C/W
• Package / Case: TO-3P (N)
• Power Dissipation: 170 W
• Power Dissipation Pd: 170 W
• Pulsed Current Icm: 60 A
• Rise Time: 70 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - TF 3 2
• Fischer Elektronik - WLK 5