Datasheet HGTG12N60A4D - Fairchild IGBT, TO-247 — 数据表

Fairchild HGTG12N60A4D

Part Number: HGTG12N60A4D

详细说明

Manufacturer: Fairchild

Description: IGBT, TO-247

Docket:
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337.
Features

Specifications:

Transistor Type: IGBT
DC Collector Current: 54 A
Collector Emitter Voltage Vces: 2.7 V
Power Dissipation Max: 167 W
Collector Emitter Voltage V(br)ceo: 600 V
Operating Temperature Range: -55°C to +150°C
Transistor Case Style: TO-247
Number of Pins: 3
SVHC: No SVHC (18-Jun-2010)
Alternate Case Style: SOT-249
Current Ic Continuous a Max: 54 A
Current Temperature: 25°C
Device Marking: HGTG12N60A4D
Fall Time tf: 95 ns
Full Power Rating Temperature: 25°C
Number of Transistors: 1
Package / Case: TO-247
Power Dissipation: 167 W
Power Dissipation Pd: 167 W
Pulsed Current Icm: 96 A
Rise Time: 16 ns
SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
Termination Type: Through Hole
Transistor Polarity: N
Voltage Vces: 600 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5