Datasheet IGB50N60T - Infineon IGBT,600V,50A,TO263 — 数据表

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Manufacturer: Infineon

Description: IGBT,600V,50A,TO263

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Docket:
TrenchStop® Series
IGB50N60T p
Low Loss IGBT in TrenchStop® technology
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time ­ 5µs Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TrenchStop® technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600 V IC 50 A VCE(sat),Tj=25°C 1.5 V Tj,max 175 °C Marking G50T60 Package PG-TO-263-3-2
C

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 50 A
• Collector Emitter Voltage Vces: 2 V
• Power Dissipation Max: 333 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-263
• Number of Pins: 3

RoHS: Yes