Datasheet IGW50N60T - Infineon IGBT,600V,50A,TO247 — 数据表
Part Number: IGW50N60T
详细说明
Manufacturer: Infineon
Description: IGBT,600V,50A,TO247
Docket:
TrenchStop® Series
IGP50N60T IGW50N60T
Low Loss IGBT in TrenchStop® and Fieldstop technology
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 600 V applications offers : PG-TO-220-3-1 - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600 V 600 V IC 50 A 50 A VCE(sat),Tj=25°C 1.5 V 1.5 V Tj,max 175 °C 175 °C Marking G50T60 G50T60 Package PG-TO-220-3-1 PG-TO-247-3
C
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 50 A
- Collector Emitter Voltage Vces: 2 V
- Power Dissipation Max: 333 W
- Collector Emitter Voltage V(br)ceo: 600 V
- Operating Temperature Range: -40°C to +175°C
- Transistor Case Style: TO-247
- Number of Pins: 3
RoHS: Yes
Accessories:
- Fischer Elektronik - THFU 2