Datasheet IHW20N120R3 - Infineon IGBT+ DIODE,1200V,20A,TO247 — 数据表

详细说明

Manufacturer: Infineon

Description: IGBT+ DIODE,1200V,20A,TO247

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Docket:
IHW20N120R3
IH-series
Reverse conducting IGBT with monolithic body diode
Features: · Powerful monolithic body diode with low forward voltage designed for soft commutation only · TrenchStop® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coefficient in VCEsat · Low EMI · Qualified according to JEDEC J-STD-020 and JESD-022 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: · Inductive cooking
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Specifications:

• Transistor Type: IGBT
• DC Collector Current: 20 A
• Collector Emitter Voltage Vces: 1.7 V
• Power Dissipation Max: 310 W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-247
• Number of Pins: 3

RoHS: Yes

Accessories:

• Fischer Elektronik - THFU 2