Datasheet IHW30N90T - Infineon IGBT+ DIODE,900V,30A,TO247 — 数据表

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Manufacturer: Infineon

Description: IGBT+ DIODE,900V,30A,TO247

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Docket:
Soft Switching Series
IHW30N90T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode
Features: · 1.1V Forward voltage of antiparallel diode · TrenchStop® and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) · Low EMI · Qualified according to JEDEC1 for target applications · Application specific optimisation of inverse diode · Pb-free lead plating; RoHS compliant Applications: · Microwave Oven · Soft Switching Applications for ZCS Type IHW30N90T VCE 900V IC 30A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking H30T90 Package PG-TO-247-3
C

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 30 A
• Collector Emitter Voltage Vces: 1.7 V
• Power Dissipation Max: 428 W
• Collector Emitter Voltage V(br)ceo: 900 V
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-247
• Number of Pins: 3

RoHS: Yes

Accessories:

• Fischer Elektronik - THFU 2