Datasheet IKW25N120T2 - Infineon IGBT+ DIODE, 1200 V, 25 A, TO247 — 数据表

详细说明

Manufacturer: Infineon

Description: IGBT+ DIODE, 1200 V, 25 A, TO247

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Docket:
TrenchStop 2
®
nd
IKW25N120T2
generation Series

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 25 A
• Collector Emitter Voltage Vces: 2.2 V
• Power Dissipation Max: 349 W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-247
• Number of Pins: 3

RoHS: Yes

Accessories:

• Fischer Elektronik - THFU 2