Datasheet 2MBI75S-120-50 - Fuji Electric IGBT, DUAL, MODULE, 75 A, 1200 V, NPT — 数据表

详细说明

Manufacturer: Fuji Electric

Description: IGBT, DUAL, MODULE, 75 A, 1200 V, NPT

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Docket:
2MBI 75S-120
IGBT MODULE ( S-Series ) Features
· NPT-Technology · Square SC SOA at 10 x IC · High Short Circuit Withstand-Capability · Small Temperature Dependence of the Turn-Off Switching Loss · Low Losses And Soft Switching
2-Pack IGBT 1200V 2x75A
Outline Drawing

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.6 V
• Current Ic @ Vce Sat: 75 A
• Current Ic Continuous a Max: 100 A
• Current Temperature: 25°C
• DC Collector Current: 100 A
• External Depth: 34 mm
• External Length / Height: 30 mm
• External Width: 92 mm
• Fall Time tf: 450 ns
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Module Configuration: Dual
• Mounting Type: Screw
• Number of Pins: 7
• Number of Transistors: 2
• Package / Case: M232
• Power Dissipation Max: 600 W
• Power Dissipation: 600 W
• Pulsed Current Icm: 200 A
• Rise Time: 350 ns
• Transistor Case Style: Module
• Transistor Polarity: N Channel
• Voltage Vces: 1.2 kV

RoHS: Yes

其他名称:

2MBI75S12050, 2MBI75S 120 50