Datasheet BSM200GB120DN2 - Infineon IGBT MODULE, DUAL, 1200 V — 数据表

详细说明

Manufacturer: Infineon

Description: IGBT MODULE, DUAL, 1200 V

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Docket:
BSM 200 GB 120 DN2
IGBT Power Module
· Half-bridge · Including fast free-wheeling diodes · Package with insulated metal base plate
Type BSM 200 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 k Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C
VCE

Specifications:

• Alternate Case Style: M62a
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 3 V
• Current Ic Continuous a Max: 200 A
• Current Temperature: 80°C
• DC Collector Current: 290 A
• Fall Time tf: 120 ns
• Mounting Type: Screw
• Number of Pins: 7
• Operating Temperature Range: -40°C to +125°C
• Package / Case: Half Bridge 2
• Power Dissipation Max: 1.4 kW
• Power Dissipation Pd: 1.4 kW
• Power Dissipation: 1.4 kW
• Pulsed Current Icm: 400 A
• Rise Time: 160 ns
• Transistor Type:
• Voltage Vces: 1.2kV

RoHS: Yes