Datasheet BSM25GD120DN2 - Infineon IGBT MODULE, 1200 V, ECONOPACK3 — 数据表

详细说明

Manufacturer: Infineon

Description: IGBT MODULE, 1200 V, ECONOPACK3

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Docket:
BSM 25 GD 120 DN2
IGBT Power Module
· Power module · 3-phase full-bridge · Including fast free-wheel diodes · Package with insulated metal base plate Type BSM 25 GD 120 DN2 BSM 25 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 k Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis Ptot 200 + 150 -40 ... + 125 0.6 1 2500 16 11 F 40 / 125 / 56 sec Vac mm K/W °C ICpuls 70 50 W VGE IC 35 25 Symbol VCE VCGR 1200 ± 20 A Values 1200 Unit V VCE IC Package ECONOPACK 2 ECONOPACK 2K Ordering Code C67076-A2505-A67 C67070-A2505-A67
1200V 35A 1200V 35A
1

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 3 V
• Current Ic Continuous a Max: 25 A
• Current Temperature: 80°C
• DC Collector Current: 35 A
• Full Power Rating Temperature: 25°C
• Module Configuration: Six
• Mounting Type: Solder
• Number of Pins: 17
• Number of Transistors: 6
• Operating Temperature Range: -40°C to +125°C
• Package / Case: Econopack 2
• Power Dissipation Max: 200 W
• Power Dissipation Pd: 200 W
• Power Dissipation: 200 W
• Pulsed Current Icm: 50 A
• Transistor Case Style: Econopack 2
• Transistor Type:
• Voltage Vce Sat Typ: 2.5 V
• Voltage Vces: 1.2kV

RoHS: Yes