Datasheet BSM75GAR120DN2 - Infineon IGBT MODULE, CHOPPER, 1200 V — 数据表

详细说明

Manufacturer: Infineon

Description: IGBT MODULE, CHOPPER, 1200 V

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Docket:


Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 3 V
• Current Ic Continuous a Max: 75 A
• DC Collector Current: 105 A
• Module Configuration: Dual
• Number of Pins: 7
• Operating Temperature Range: -40°C to +125°C
• Package / Case: M34a
• Power Dissipation Max: 625 W
• Power Dissipation Pd: 625 W
• Transistor Case Style: Module
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2kV

RoHS: Yes