Datasheet FD150R12RT4 - Infineon IGBT, MED POW, FD CHO, 1200 V, 125 A — 数据表

详细说明

Manufacturer: Infineon

Description: IGBT, MED POW, FD CHO, 1200 V, 125 A

Download Data Sheet

Docket:
! # # $ % & ' ! "
"
#()* + ,( -./ + 3 4 0 5 % $0 5 $ $ ;6# 6 = > 4 =% =5 6 $ % 6 4 $D % #()FGH $D 3?@ .A + IJ $ $ #()FGH 4 $, $6 4 =% K % 4$ % 4 4 3 0 $ 9 %4 : 7 & $ $ ;<6 6
# 0 ' ,(12 +
6 4

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.75 V
• DC Collector Current: 150 A
• Module Configuration: Single
• Number of Pins: 5
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 790 W
• Transistor Polarity: N Channel

RoHS: Yes