Datasheet FP35R12U1T4 - Infineon IGBT, LOW POWER NTC, 1200 V, 35 A, PIM — 数据表

详细说明

Manufacturer: Infineon

Description: IGBT, LOW POWER NTC, 1200 V, 35 A, PIM

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Docket:
Technische Information / technical information
IGBT-Module IGBT-modules
FP35R12U1T4
SmartPIM Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
' ( ) *

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.85 V
• DC Collector Current: 35 A
• Number of Pins: 23
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 250 W
• Transistor Case Style: Module
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• Infineon - FP25R12U1T4