Datasheet FS200R12PT4 - Infineon IGBT, POW, QUAD W NTC, 1200 V, 200 A — 数据表

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Manufacturer: Infineon

Description: IGBT, POW, QUAD W NTC, 1200 V, 200 A

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Docket:
Technische Information / technical information
IGBT-Module IGBT-modules
FS200R12PT4
EconoPACKTM4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACKTM4 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
# $ % & '

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.75 V
• DC Collector Current: 200 A
• Module Configuration: Six
• Number of Pins: 20
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 1 kW
• Transistor Case Style: Module
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• Infineon - FS150R12PT4