Datasheet 2MBI50N-060 - Fuji Electric IGBT MODULE, 600 V, 50 A — 数据表

详细说明

Manufacturer: Fuji Electric

Description: IGBT MODULE, 600 V, 50 A

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Docket:
IGBT MODULE ( N series ) n Features
· Square RBSOA · Low Saturation Voltage · Less Total Power Dissipation · Improved FWD Characteristic · Minimized Internal Stray Inductance · Overcurrent Limiting Function (~3 Times Rated Current)
n Outline Drawing
n Applications
· High Power Switching · A.C.

Motor Controls · D.C. Motor Controls · Uninterruptible Power Supply

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 2.8 V
• Current Ic @ Vce Sat: 50 A
• Current Ic Continuous a Max: 50 A
• Current Temperature: 25°C
• DC Collector Current: 50 A
• External Depth: 34 mm
• External Length / Height: 30 mm
• External Width: 92 mm
• Fall Time tf: 350 ns
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Mounting Type: Screw
• Number of Pins: 7
• Number of Transistors: 2
• Package / Case: M232
• Power Dissipation Max: 250 W
• Power Dissipation Pd: 250 W
• Power Dissipation: 250 W
• Pulsed Current Icm: 100 A
• Rise Time: 600 ns
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 600 V
• Weight: 0.18kg

RoHS: Yes

其他名称:

2MBI50N060, 2MBI50N 060