Datasheet SK10GH123 - Semikron IGBT MODULE, H BRIDGE, 1200 V — 数据表

详细说明

Manufacturer: Semikron

Description: IGBT MODULE, H BRIDGE, 1200 V

Specifications:

• Av Current Ic: 16 A
• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 3.2 V
• Current Ic Continuous a Max: 16 A
• Current Ic Continuous b Max: 11 A
• Current Temperature: 25°C
• DC Collector Current: 16 A
• External Depth: 28 mm
• External Width: 40.5 mm
• Fixing Centres: 38 mm
• Fixing Hole Diameter: 2 mm
• Mounting Type: Screw
• Number of Transistors: 4
• Operating Temperature Range: -40°C to +150°C
• Package / Case: SEMITOP 2
• Power Dissipation Pd: 1.8 kW
• Pulsed Current Icm: 32 A
• Rise Time: 45 ns
• SMD Marking: SEMITOP2
• Transistor Case Style: SEMITOP 2
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2 kV
• Voltage: 1.2 kV

RoHS: Yes