Datasheet LMC662CN/NOPB - National Semiconductor IC, OP-AMP, 1.4 MHz, 1.1 V/µs, DIP-8 — 数据表

详细说明

Manufacturer: National Semiconductor

Description: IC, OP-AMP, 1.4 MHz, 1.1 V/µs, DIP-8

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Docket:
LMC662 CMOS Dual Operational Amplifier
April 2003
LMC662 CMOS Dual Operational Amplifier
General Description
The LMC662 CMOS Dual operational amplifier is ideal for operation from a single supply.

It operates from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain into realistic loads (2 k and 600) are all equal to or better than widely accepted bipolar equivalents. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LMC660 datasheet for a Quad CMOS operational amplifier with these same features.

Specifications:

• Bandwidth: 1.4 MHz
• Number of Amplifiers: 2
• Number of Pins: 8
• Op Amp Type: High Gain
• Package / Case: DIP
• Slew Rate: 1.1 V/µs
• Supply Voltage Range: 4.75 V to 15.5 V

RoHS: Yes