Datasheet LPC660AIM/NOPB - National Semiconductor IC, OP AMP QUAD LP CMOS 14-SO — 数据表

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Manufacturer: National Semiconductor

Description: IC, OP AMP QUAD LP CMOS 14-SO

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Docket:
LPC660 Low Power CMOS Quad Operational Amplifier
November 2004
LPC660 Low Power CMOS Quad Operational Amplifier
General Description
The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply.

It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features. n n n n n Long-term integrator High-impedance preamplifi

Simulation Model

Specifications:

• Bandwidth: 350 kHz
• Base Number: 660
• Gain Bandwidth: 0.35 MHz
• Mounting Type: SMD
• Number of Amplifiers: 4
• Number of Pins: 14
• Op Amp Type: CMOS
• Operating Temperature Range: -40°C to +85°C
• Package / Case: SOIC
• SVHC: No SVHC (15-Dec-2010)
• Slew Rate: 0.11 V/µs
• Supply Voltage Range: 4.75 V to 15.5 V

RoHS: Yes