Datasheet IKW40N120H3 - Infineon IGBT+ DIODE, 1200 V, 40 A, TO247 — 数据表
Part Number: IKW40N120H3
详细说明
Manufacturer: Infineon
Description: IGBT+ DIODE, 1200 V, 40 A, TO247
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Specifications:
- Collector Emitter Voltage V(br)ceo: 1.2 kV
- Collector Emitter Voltage Vces: 2.4 V
- DC Collector Current: 40 A
- Number of Pins: 3
- Operating Temperature Range: -40°C to +175°C
- Power Dissipation Max: 483 W
- Transistor Case Style: TO-247
RoHS: Yes
Accessories:
- AAVID THERMALLOY - BW50-2G
- Semikron - SKM40GD123D