Datasheet FZT851 - Diodes TRANSISTOR, NPN, SOT-223 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995 FEATURES * * * * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps
FZT851 FZT853
C
E C B

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• Collector Emitter Voltage Vces: 50 mV
• Continuous Collector Current Ic Max: 6 A
• Current Ic Continuous a Max: 6 A
• Current Ic hFE: 2 A
• DC Collector Current: 6 A
• DC Current Gain hFE: 200
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 130 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 3 W
• Power Dissipation Ptot Max: 3 W
• Pulsed Current Icm: 20 A
• SMD Marking: FZT851
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Voltage Vcbo: 150 V

RoHS: Yes