Datasheet FZT857 - Diodes TRANSISTOR, NPN, SOT-223 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR
ISSUE 4 - SEPTEMBER 1997 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * VCEO = 300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps PARTMARKING DETAIL COMPLEMENTARY TYPE FZT857 FZT957
FZT857
C
E C B

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 300 V
• Collector Emitter Voltage Vces: 100 mV
• Continuous Collector Current Ic Max: 3.5 A
• Current Ic Continuous a Max: 3.5 A
• Current Ic Hfe NPN Device: 500 mA
• Current Ic hFE: 1 A
• DC Collector Current: 3.5 A
• DC Current Gain hFE: 200
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 80 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 3 W
• Power Dissipation Ptot Max: 3 W
• Pulsed Current Icm: 5 A
• SMD Marking: FZT857
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Voltage Vcbo: 350 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• Roth Elektronik - RE901