Datasheet ZTX618 - Diodes TRANSISTOR, NPN E-LINE — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN E-LINE

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Docket:
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 JULY 1995 FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A (pulsed) * Extremely low saturation voltage e.g.

7mV typ. * IC cont 3.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX718
ZTX618
C B
E

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 20 V
• Collector Emitter Voltage Vces: 255 mV
• Continuous Collector Current Ic Max: 3.5 A
• Current Ic @ Vce Sat: 3.5 A
• Current Ic Continuous a Max: 3.5 A
• Current Ic hFE: 200 mA
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 100 MHz
• Gain Bandwidth ft Typ: 140 MHz
• Hfe Min: 300
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: E-Line
• Power Dissipation Ptot Max: 1 W
• Pulsed Current Icm: 10 A
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: E-Line
• Transistor Polarity: NPN
• Transistor Type: Power Bipolar
• Voltage Vcbo: 20 V