Datasheet ZX5T851GTA - Diodes TRANSISTOR, NPN, SOT-223 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
ZX5T851G
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES

Simulation Model

Specifications:

• Av Current Ic: 6 A
• Collector Emitter Voltage V(br)ceo: 60 V
• Collector Emitter Voltage Vces: 210 mV
• Continuous Collector Current Ic Max: 6 A
• Current Ic @ Vce Sat: 6 A
• Current Ic Continuous a Max: 6 A
• Current Ic hFE: 5 A
• DC Collector Current: 6 A
• DC Current Gain hFE: 200
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 130 MHz
• Hfe Min: 55
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 1.6 W
• Power Dissipation Ptot Max: 3 W
• Pulsed Current Icm: 20 A
• Resistance R1: 35 MOhm
• SMD Marking: X5T851
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Voltage Vcbo: 150 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7
• Roth Elektronik - RE901