Datasheet ZXT13P12DE6 - Diodes TRANSISTOR, PNP, SOT23-6 — 数据表

Diodes ZXT13P12DE6

Part Number: ZXT13P12DE6

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT23-6

Docket:
ZXT13P12DE6
SuperSOT4TM 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications. FEATURES · · · · · · · · · Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 15A IC=4A Continuous Collector Current SOT23-6 package
SOT23-6

Simulation Model

Specifications:

Collector Emitter Voltage V(br)ceo: 12 V
Collector Emitter Voltage Vces: 10 mV
Continuous Collector Current Ic Max: 15 A
Current Ic @ Vce Sat: 100 mA
Current Ic Continuous a Max: 4 A
Current Ic Typ: 4 A
Current Ic hFE: 1 mA
DC Collector Current: 4 A
DC Current Gain hFE: 500
Device Marking: ZXT13P12DE6
Gain Bandwidth ft Typ: 55 MHz
Hfe Min: 300
Mounting Type: SMD
Number of Pins: 3
Operating Temperature Range: -55°C to +150°C
Package / Case: SOT-23
Power Dissipation Pd: 1.1 W
Power Dissipation Ptot Max: 1.1 W
SMD Marking: P12D
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: SOT-23
Transistor Polarity: PNP
Voltage Vcbo: 20 V

RoHS: Yes