Datasheet ZXTN04120HFFTA - Diodes DARLINGTON TRANSISTOR, NPN, SOT-23F — 数据表

详细说明

Manufacturer: Diodes

Description: DARLINGTON TRANSISTOR, NPN, SOT-23F

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Docket:
ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor
Summary
BVCEO > 120V IC(cont) = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF
Description
This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where space is at a premium.

Simulation Model

Specifications:

• Av Current Ic: 1 A
• Collector Emitter Voltage V(br)ceo: 120 V
• Collector Emitter Voltage Vces: 1.5 V
• Current Ic @ Vce Sat: 1 A
• Current Ic Continuous a Max: 2 A
• Current Ic hFE: 1 A
• DC Collector Current: 2 A
• DC Current Gain hFE: 12000
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 120 MHz
• Gain Bandwidth ft Typ: 120 MHz
• Hfe Min: 3000
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23F
• Power Dissipation Pd: 1.5 W
• Power Dissipation Ptot Max: 1.5 W
• Pulsed Current Icm: 4 A
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23F
• Transistor Polarity: NPN
• Transistor Type: Darlington
• Voltage Vcbo: 140 V

RoHS: Yes