Datasheet ZXTN2031FTA - Diodes TRANSISTOR, NPN, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

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Docket:
ZXTN2031F 50V, SOT23, NPN medium power transistor
Summary
V(BR)CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m PD = 1.2W Complementary part number: ZXTP2025F typical VCE(sat) < 40mV @ 1A
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.

The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 50 V
• Collector Emitter Voltage Vces: 18 mV
• Continuous Collector Current Ic Max: 5 A
• Current Gain Hfe Max: 125
• Current Ic Continuous a Max: 5 A
• Current Ic hFE: 10 mA
• Current Ic hfe -Do Not Use See ID 1182: 10 mA
• DC Collector Current: 5 A
• DC Current Gain Hfe Min: 190
• DC Current Gain hFE: 350
• Gain Bandwidth ft Typ: 125 MHz
• Hfe Min: 190
• Hfe Typ: 300
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 1.2 W
• Power Dissipation Ptot Max: 1 W
• SMD Marking: 322
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Voltage Vcbo: 80 V

RoHS: Yes