Datasheet ZXTN25012EFLTA - Diodes TRANSISTOR, NPN, SOT-23 — 数据表

Diodes ZXTN25012EFLTA

Part Number: ZXTN25012EFLTA

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

Docket:
ZXTN25012EFL 12V, SOT23, NPN low power transistor
Summary
BVCEO > 12V BVECO > 4.5V hFE > 500 IC(cont) = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m PD = 350mW
Description
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Simulation Model

Specifications:

Collector Emitter Voltage V(br)ceo: 12 V
Collector Emitter Voltage Vces: 130 mV
Continuous Collector Current Ic Max: 2 A
Current Ib: 500 mA
Current Ic Continuous a Max: 5 A
Current Ic hFE: 2 A
DC Collector Current: 5 A
DC Current Gain hFE: 800
Gain Bandwidth ft Typ: 260 MHz
Hfe Min: 370
Mounting Type: SMD
Number of Pins: 3
Operating Temperature Range: -55°C to +150°C
Package / Case: SOT-23
Power Dissipation Pd: 350 mW
Power Dissipation Ptot Max: 350 mW
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: SOT-23
Transistor Polarity: NPN
Turn Off Time: 72 ns
Turn On Time: 70 ns
Voltage Vcbo: 20 V

RoHS: Yes