Datasheet ZXTN25020DFH - Diodes TRANSISTOR, NPN, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

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Docket:
ZXTN25020DFH 20V SOT23 NPN medium power transistor
Summary
BVCEX > 100V; BV(BR)CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 28 m PD = 1.25W Complementary part number ZXTP25020DFH typical VCE(sat) < 43 mV @ 1A;
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.

The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 20 V
• Collector Emitter Voltage Vces: 43 mV
• Continuous Collector Current Ic Max: 4.5 A
• Current Gain Hfe Max: 900
• Current Ic Continuous a Max: 4.5 A
• Current Ic hFE: 10 mA
• Current Ic hfe -Do Not Use See ID 1182: 10 mA
• DC Collector Current: 4.5 A
• DC Current Gain Hfe Max: 900
• DC Current Gain Hfe Min: 300
• DC Current Gain hFE: 450
• Gain Bandwidth ft Typ: 215 MHz
• Hfe Min: 300
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 1.25 W
• Power Dissipation Ptot Max: 1.25 W
• SMD Marking: 016
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Voltage Vcbo: 100 V

RoHS: Yes