Datasheet ZXTN25050DFH - Diodes TRANSISTOR, NPN, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

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Docket:
ZXTN25050DFH 50V, SOT23, NPN medium power transistor
Summary
BVCEX > 150V BVCEO > 50V BVECO > 5V IC(cont) = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m PD = 1.25W
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.

The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 50 V
• Collector Emitter Voltage Vces: 60 mV
• Continuous Collector Current Ic Max: 4 A
• Current Gain Hfe Max: 900
• Current Ic Continuous a Max: 4 A
• Current Ic hFE: 10 mA
• Current Ic hfe -Do Not Use See ID 1182: 10 mA
• DC Collector Current: 4 A
• DC Current Gain Hfe Max: 900
• DC Current Gain Hfe Min: 300
• DC Current Gain hFE: 450
• Gain Bandwidth ft Typ: 200 MHz
• Hfe Min: 300
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 1.25 W
• Power Dissipation Ptot Max: 1.25 W
• SMD Marking: 017
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Voltage Vcbo: 150 V

RoHS: Yes