Datasheet ZXT10P12DE6TA - Diodes TRANSISTOR, PNP, SOT23-6 — 数据表

Diodes ZXT10P12DE6TA

Part Number: ZXT10P12DE6TA

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT23-6

Docket:
ZXT10P12DE6
SuperSOTTM 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications. FEATURES · · · · · · · · · Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=3A Continuous Collector Current SOT23-6 package
SOT23-6

Simulation Model

Specifications:

Collector Emitter Voltage V(br)ceo: 12 V
Collector Emitter Voltage Vces: 300 mV
Continuous Collector Current Ic Max: 3 A
Current Ib: 500 mA
Current Ic Continuous a Max: -3 A
Current Ic hFE: 2.5 A
Gain Bandwidth ft Min: 80 MHz
Gain Bandwidth ft Typ: 110 MHz
Hfe Min: 180
Mounting Type: SMD
Number of Transistors: 1
Package / Case: SOT-23
Peak Current Icm: 10 A
Power Dissipation Pd: 1.1 W
Power Dissipation Ptot Max: 1.1 W
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: SOT-23
Transistor Polarity: PNP
Transistor Type: Low Saturation (BISS)
Voltage Vcbo: 12 V

RoHS: Yes