Datasheet FMMT494TA - Diodes TRANSISTOR, NPN, 120 V, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, 120 V, SOT-23

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Docket:
SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL 7 494
FMMT494
E
C B

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 120 V
• Collector Emitter Voltage Vces: 300 mV
• Continuous Collector Current Ic Max: 1 A
• Current Ib: 200 mA
• Current Ic Continuous a Max: 500 mA
• Current Ic hFE: 1 A
• DC Collector Current: 500 mA
• DC Current Gain hFE: 100
• Gain Bandwidth ft Typ: 100 MHz
• Hfe Min: 20
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 500 mW
• Power Dissipation Ptot Max: 500 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Voltage Vcbo: 140 V

RoHS: Yes