Datasheet ZX5T853G - Diodes TRANSISTOR, NPN, SOT-223 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
ZX5T853G
100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES

Simulation Model

Specifications:

• Av Current Ic: 6 A
• Collector Emitter Voltage V(br)ceo: 100 V
• Collector Emitter Voltage Vces: 220 mV
• Continuous Collector Current Ic Max: 6 A
• Current Ic @ Vce Sat: 4 A
• Current Ic Continuous a Max: 6 A
• Current Ic hFE: 5 A
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 130 MHz
• Hfe Min: 30
• Mounting Type: SMD
• Number of Transistors: 1
• Package / Case: SOT-223
• Power Dissipation Ptot Max: 3 W
• Power Dissipation: 1.6 W
• Pulsed Current Icm: 10 A
• Resistance R1: 36 MOhm
• SMD Marking: X5T853
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Transistor Type: Bipolar
• Voltage Vcbo: 200 V

RoHS: Yes