Datasheet ZXTN2007GTA - Diodes TRANSISTOR, NPN, SOT-223 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
ZXTN2007G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: 35 mV
• Current Ic Continuous a Max: 6.5 A
• Gain Bandwidth ft Typ: 140 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Package / Case: SOT-223
• Power Dissipation: 1.6 W
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Transistor Type: Bipolar

RoHS: Yes