Datasheet ZXTP2029FTA - Diodes TRANSISTOR, PNP, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-23

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Docket:
ZXTP2029F 100V, SOT23, PNP medium power transistor
Summary
V(BR)CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m PD = 1.2W Complementary part number ZXTN2020F typical VCE(sat) < -80mV @ -1A
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.

The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• Collector Emitter Voltage Vces: -30 mV
• Continuous Collector Current Ic Max: 3 A
• Current Gain Hfe Max: 75
• Current Ic Continuous a Max: -4 A
• Current Ic hFE: 10 mA
• Current Ic hfe -Do Not Use See ID 1182: 10 mA
• DC Current Gain Hfe Min: 100
• Gain Bandwidth ft Typ: 150 MHz
• Hfe Min: 100
• Hfe Typ: 220
• Mounting Type: SMD
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 1.2 W
• Power Dissipation Ptot Max: 1 W
• SMD Marking: 953
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Voltage Vcbo: 130 V

RoHS: Yes