Datasheet BDP949 - Infineon TRANSISTOR, NPN, SOT-223 — 数据表

详细说明

Manufacturer: Infineon

Description: TRANSISTOR, NPN, SOT-223

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Docket:
BDP947, BDP949
Silicon NPN Transistors · For AF driver and output stages · High collector current · High current gain · Low collector-emitter saturation voltage · Complementary types: BDP948, BDP950 (PNP)
4 2 1 3
Type BDP947 BDP949
Maximum Ratings Parameter

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• Collector Emitter Voltage Vces: 500 mV
• Continuous Collector Current Ic Max: 3 A
• Current Ic Continuous a Max: 3 A
• DC Collector Current: 3 A
• DC Current Gain Min: 40
• DC Current Gain: 500 mA
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 100 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: SOT-223
• Power Dissipation Pd: 3 W
• Power Dissipation Ptot Max: 1.5 W
• Pulsed Current Icm: 5 A
• SMD Marking: BDP 949
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Voltage Vcbo: 60 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7
• Roth Elektronik - RE901