Datasheet SMBT2907A - Infineon TRANSISTOR, PNP, SOT-23 — 数据表

详细说明

Manufacturer: Infineon

Description: TRANSISTOR, PNP, SOT-23

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Docket:
SMBT2907A/MMBT2907A
PNP Silicon Switching Transistor · High DC current gain: 0.1 mA to 500 mA · Low collector-emitter saturation voltage · Complementary type: SMBT2222A / MMBT2222A (NPN)
3 1
2
Type Marking SMBT2907A/MMBT2907A s2F

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• Collector Emitter Voltage Vces: 400 mV
• Continuous Collector Current Ic Max: 600 mA
• Current Ic @ Vce Sat: 150 mA
• Current Ic Continuous a Max: 600 mA
• DC Collector Current: 600 mA
• DC Current Gain Max: 300
• DC Current Gain Min: 100
• DC Current Gain: 150 mA
• Gain Bandwidth ft Min: 200 MHz
• Gain Bandwidth ft Typ: 200 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: SOT-23
• Power Dissipation Pd: 330 mW
• Power Dissipation Ptot Max: 330 mW
• Pulsed Current Icm: 600 mA
• SMD Marking: 2F
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Voltage Vcbo: 60 V

RoHS: Yes