Datasheet NTE103A - NTE Electronics POWER TRANSISTOR, NPN, 32 V, TO-1 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: POWER TRANSISTOR, NPN, 32 V, TO-1

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Docket:
NTE102A (PNP) & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier
Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 32 V
• DC Collector Current: 15 A
• DC Current Gain Max (hfe): 69
• Number of Pins: 3
• Power (Ptot): 175 W
• Power Dissipation Pd: 175 W
• Transistor Polarity: NPN