Datasheet NTE159M - NTE Electronics BIPOLAR TRANSISTOR, PNP, -60 V TO-18 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, PNP, -60 V TO-18

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Docket:
NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose
Description: The NTE123A (NPN) and NTE159M (PNP) are widely used "Industry Standard" complementary transistors in a TO18 type case designed for applications such as medium­speed switching and amplifiers from audio to VHF frequencies.

Features: D Low Collector Saturation Voltage: 1V (Max) D High Current Gain­Bandwidth Product: fT = 300MHz (Min) @ IC 20mA Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector­Base Voltage, VCBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE159M . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: -60 V
• DC Collector Current: -600 mA
• DC Current Gain Max (hfe): 100
• Power Dissipation Pd: 400 mW
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 200 MHz

RoHS: Yes