Datasheet NTE181 - NTE Electronics BIPOLAR TRANSISTOR, NPN, -90 V, TO-3 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, -90 V, TO-3

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Docket:
NTE180 (PNP) & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier
Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel.

Features: D High DC Current Gain: hFE = 25 ­ 100 @ IC = 7.5A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector­Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector C

Specifications:

• Collector Emitter Voltage V(br)ceo: -90 V
• DC Collector Current: 300 mA
• DC Current Gain Max (hfe): 100
• Power Dissipation Pd: 200 W
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 2 MHz

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 403K