Datasheet NTE197 - NTE Electronics POWER TRANSISTOR, PNP, -70 V, TO-220 — 数据表

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Manufacturer: NTE Electronics

Description: POWER TRANSISTOR, PNP, -70 V, TO-220

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Docket:
NTE196 (NPN) & NTE197 (PNP) Silicon Complementary Transistors Audio Power Output and Medium Power Switching
Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications.

Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector­Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current­Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA (NTE196) = 10MHz Min @ IC = 500mA (NTE197) Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Coll

Specifications:

• Collector Emitter Voltage V(br)ceo: -70 V
• DC Collector Current: 100 mA
• DC Current Gain Max (hfe): 90
• Power Dissipation Pd: 1.67 W
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 10 MHz