Datasheet NTE199 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 50 V, TO-92 — 数据表
Part Number: NTE199
详细说明
Manufacturer: NTE Electronics
Description: BIPOLAR TRANSISTOR, NPN, 50 V, TO-92
Docket:
NTE199 Silicon NPN Transistor Low Noise, High Gain Amplifier
Description: The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications.
This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Steady State Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissip
Specifications:
- Collector Emitter Voltage V(br)ceo: 50 V
- DC Collector Current: 100 mA
- DC Current Gain Max (hfe): 800
- Operating Temperature Range: -55°C to +125°C
- Power Dissipation Pd: 360 mW
- Transistor Polarity: NPN
RoHS: Yes
Accessories:
- Fairchild - 2N3391A..
- Fairchild - 2N3859A